Infineon iPB Type N-Channel MOSFET, 120 A, 100 V N, 3-Pin TO-263 IPB020N10N5LFATMA1

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Kr.36 06 

(exc. VAT)

Kr.45 08 

(inc. VAT)

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1 - 9Kr. 36,06
10 - 24Kr. 34,21
25 - 49Kr. 32,83
50 - 99Kr. 31,46
100 +Kr. 29,17

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Packaging Options:
RS Stock No.:
258-3786
Mfr. Part No.:
IPB020N10N5LFATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2mΩ

Channel Mode

N

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.89V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

195nC

Maximum Power Dissipation Pd

313W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS, IEC 61249-2-21

Automotive Standard

No

The Infineon OptiMOS Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance and linear mode capability operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.

High max. pulse current

High continuous pulse current

Rugged linear mode operation

Low conduction losses

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