Infineon iPB Type N-Channel MOSFET, 166 A, 80 V N, 3-Pin TO-263

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Subtotal (1 reel of 1000 units)*

Kr.15 878 00 

(exc. VAT)

Kr.19 848 00 

(inc. VAT)

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1000 +Kr. 15,878Kr. 15 878,00

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RS Stock No.:
258-3788
Mfr. Part No.:
IPB024N08N5ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

166A

Maximum Drain Source Voltage Vds

80V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.4mΩ

Channel Mode

N

Forward Voltage Vf

0.92V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

99nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

214W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon OptiMOS 5 80V industrial power MOSFET offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.

Optimized for synchronous rectification

Ideal for high switching frequency

Less paralleling required

Increased power density

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