Infineon iPB Type N-Channel MOSFET, 166 A, 100 V N, 7-Pin TO-263

View all MOSFETs

Subtotal (1 reel of 1000 units)*

Kr.20 120 00 

(exc. VAT)

Kr.25 150 00 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 1 000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
1000 +Kr. 20,12Kr. 20 120,00

*price indicative

RS Stock No.:
258-3790
Mfr. Part No.:
IPB032N10N5ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

166A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

3.2mΩ

Channel Mode

N

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

76nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

187W

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 61249-2-21, RoHS

Automotive Standard

No

The Infineon OptiMOS 5 100V power MOSFET is especially designed for synchronous rectification in telecom blocks including Or-ing, hot swap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.

Reduced switching and conduction losses

Less paralleling required

Increased power density

Low voltage overshoot

Related links