Infineon iPB Type N-Channel MOSFET, 166 A, 80 V N, 3-Pin TO-263 IPB024N08N5ATMA1

View all MOSFETs
Bulk discount available

Subtotal (1 unit)*

Kr.30 20 

(exc. VAT)

Kr.37 75 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 1 000 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 9Kr. 30,20
10 - 24Kr. 27,80
25 - 49Kr. 25,97
50 - 99Kr. 24,02
100 +Kr. 22,31

*price indicative

Packaging Options:
RS Stock No.:
258-3789
Mfr. Part No.:
IPB024N08N5ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

166A

Maximum Drain Source Voltage Vds

80V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.4mΩ

Channel Mode

N

Forward Voltage Vf

0.92V

Typical Gate Charge Qg @ Vgs

99nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

214W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon OptiMOS 5 80V industrial power MOSFET offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.

Optimized for synchronous rectification

Ideal for high switching frequency

Less paralleling required

Increased power density

Related links