Infineon iPB Type N-Channel MOSFET, 136 A, 150 V N, 7-Pin TO-263 IPB060N15N5ATMA1

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Kr.75 06 

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Kr.93 82 

(inc. VAT)

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1 - 9Kr. 75,06
10 - 24Kr. 71,39
25 - 49Kr. 68,30
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100 +Kr. 60,75

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Packaging Options:
RS Stock No.:
258-3794
Mfr. Part No.:
IPB060N15N5ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

136A

Maximum Drain Source Voltage Vds

150V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

6mΩ

Channel Mode

N

Forward Voltage Vf

0.9V

Maximum Power Dissipation Pd

250W

Typical Gate Charge Qg @ Vgs

54.5nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 61249-2-21, RoHS

Automotive Standard

No

The Infineon OptiMOS 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklifts and e-scooters, as well as telecom and solar applications. The new products offer a breakthrough reduction in RDS(on) and Qrr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge increases commutation ruggedness.

Lower output charge

Ultra-low reverse recovery charge

Reduced paralleling

Higher power density designs


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