Infineon iPB Type N-Channel MOSFET, 100 A, 120 V Enhancement TO-263 IPB100N12S305ATMA1

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Subtotal (1 unit)*

Kr.37 59 

(exc. VAT)

Kr.46 99 

(inc. VAT)

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1 - 9Kr. 37,59
10 - 24Kr. 33,86
25 - 49Kr. 31,57
50 - 99Kr. 29,52
100 +Kr. 27,46

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Packaging Options:
RS Stock No.:
258-3796
Mfr. Part No.:
IPB100N12S305ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

120V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Maximum Drain Source Resistance Rds

4.8mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

300W

Typical Gate Charge Qg @ Vgs

139nC

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T power-transistor is N-channel normal level enhancement mode. It has 175°C operating temperature.

AEC qualified

MSL1 up to 260°C peak reflow

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