Infineon IPD Type N-Channel MOSFET, 35 A, 120 V Enhancement, 3-Pin PG-TO-252 IPD35N12S3L24ATMA1

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Subtotal (1 pack of 5 units)*

Kr.83 43 

(exc. VAT)

Kr.104 29 

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45Kr. 16,686Kr. 83,43
50 - 120Kr. 13,66Kr. 68,30
125 - 245Kr. 12,836Kr. 64,18
250 - 495Kr. 11,852Kr. 59,26
500 +Kr. 11,006Kr. 55,03

*price indicative

Packaging Options:
RS Stock No.:
258-3840
Mfr. Part No.:
IPD35N12S3L24ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

120V

Series

IPD

Package Type

PG-TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

30nC

Maximum Power Dissipation Pd

71W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T power-transistor is power MOSFET for automotive applications. It has 175°C operating temperature.

N-channel - Enhancement mode

Automotive AEC Q101 qualified

MSL1 up to 260°C peak reflow

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