Infineon IPD Type P-Channel MOSFET, -80 A, -30 V Enhancement, 3-Pin PG-TO-252

View all MOSFETs

Subtotal (1 reel of 2500 units)*

Kr.11 257 50 

(exc. VAT)

Kr.14 072 50 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 30. mars 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
2500 +Kr. 4,503Kr. 11 257,50

*price indicative

RS Stock No.:
258-3863
Mfr. Part No.:
IPD80P03P4L07ATMA2
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-80A

Maximum Drain Source Voltage Vds

-30V

Package Type

PG-TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.8mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.3V

Typical Gate Charge Qg @ Vgs

63nC

Maximum Power Dissipation Pd

88W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-0.31 V

Maximum Operating Temperature

175°C

Standards/Approvals

DIN IEC 68-1, RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.

No charge pump required for high side drive

Simple interface drive circuit

Highest current capability

Related links