Infineon IPD Type P-Channel MOSFET, -50 A, -40 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

Kr.12 115 00 

(exc. VAT)

Kr.15 145 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 4,846Kr. 12 115,00

*price indicative

RS Stock No.:
258-3843
Mfr. Part No.:
IPD50P04P4L11ATMA2
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-50A

Maximum Drain Source Voltage Vds

-40V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

10.6mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

45nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

58W

Forward Voltage Vf

-1V

Maximum Gate Source Voltage Vgs

5 V

Maximum Operating Temperature

175°C

Standards/Approvals

DIN IEC 68-1, RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.

No charge pump required for high side drive

Simple interface drive circuit

Highest current capability

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