Infineon IPD Type P-Channel MOSFET, -90 A, -40 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

Kr.23 612 50 

(exc. VAT)

Kr.29 515 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 9,445Kr. 23 612,50

*price indicative

RS Stock No.:
258-3870
Mfr. Part No.:
IPD90P04P4L04ATMA2
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

-90A

Maximum Drain Source Voltage Vds

-40V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.2mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

5 V

Maximum Power Dissipation Pd

125W

Forward Voltage Vf

-1V

Typical Gate Charge Qg @ Vgs

135nC

Maximum Operating Temperature

175°C

Standards/Approvals

DIN IEC 68-1, RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency and robust packages with superior quality and reliability.

P-channel - Logic Level - Enhancement mode

AEC qualified

Simple interface drive circuit

World's lowest RDSon at 40V

Highest current capability

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