Infineon IPD Type P-Channel MOSFET, -90 A, -40 V Enhancement, 3-Pin TO-252 IPD90P04P405ATMA2

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Subtotal (1 pack of 2 units)*

Kr.51 94 

(exc. VAT)

Kr.64 92 

(inc. VAT)

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Per Pack*
2 - 18Kr. 25,97Kr. 51,94
20 - 48Kr. 21,565Kr. 43,13
50 - 98Kr. 20,25Kr. 40,50
100 - 198Kr. 18,645Kr. 37,29
200 +Kr. 17,39Kr. 34,78

*price indicative

Packaging Options:
RS Stock No.:
258-3869
Mfr. Part No.:
IPD90P04P405ATMA2
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

-90A

Maximum Drain Source Voltage Vds

-40V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.7mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

118nC

Forward Voltage Vf

-1V

Maximum Power Dissipation Pd

125W

Maximum Operating Temperature

175°C

Standards/Approvals

DIN IEC 68-1, RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.

No charge pump required for high side drive

Simple interface drive circuit

Highest current capability

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