Infineon IPD Type N-Channel MOSFET, 90 A, 40 V Enhancement, 3-Pin TO-252 IPD90N04S4L04ATMA1
- RS Stock No.:
- 229-1837
- Mfr. Part No.:
- IPD90N04S4L04ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 15 units)*
Kr.63 75
(exc. VAT)
Kr.79 65
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 14 460 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 60 | Kr. 4,25 | Kr. 63,75 |
| 75 - 135 | Kr. 4,035 | Kr. 60,53 |
| 150 - 360 | Kr. 3,867 | Kr. 58,01 |
| 375 - 735 | Kr. 3,691 | Kr. 55,37 |
| 750 + | Kr. 3,439 | Kr. 51,59 |
*price indicative
- RS Stock No.:
- 229-1837
- Mfr. Part No.:
- IPD90N04S4L04ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.8mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Maximum Power Dissipation Pd | 71W | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.8mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Maximum Power Dissipation Pd 71W | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon n channel normal level power MOSFET used for automotive applications. It has lowest switching and conduction power losses for highest thermal efficiency. It is robust packages with superior quality and reliability.
It is RoHS compliant and AEC qualified
It has 175°C operating temperature
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