Infineon IPD N-Channel MOSFET, 90 A, 40 V Enhancement, 3-Pin TO-252 IPD90N04S4L04ATMA1
- RS Stock No.:
- 229-1837
- Mfr. Part No.:
- IPD90N04S4L04ATMA1
- Brand:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 15 units)*
Kr. 162,23
(exc. VAT)
Kr. 202,79
(inc. VAT)
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In Stock
- Plus 10 410 unit(s) shipping from 28 September 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 60 | Kr. 10,815 | Kr. 162,23 |
| 75 - 135 | Kr. 10,525 | Kr. 157,88 |
| 150 - 360 | Kr. 10,235 | Kr. 153,53 |
| 375 - 735 | Kr. 9,991 | Kr. 149,87 |
| 750 + | Kr. 9,731 | Kr. 145,97 |
*price indicative
- RS Stock No.:
- 229-1837
- Mfr. Part No.:
- IPD90N04S4L04ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 71W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.5mm | |
| Width | 6.22mm | |
| Standards/Approvals | No | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 71W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Length 6.5mm | ||
Width 6.22mm | ||
Standards/Approvals No | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
Infineon IPD Series MOSFET, 40V Maximum Drain Source Voltage, 90A Maximum Continuous Drain Current - IPD90N04S4L04ATMA1
This MOSFET is a semiconductor switch designed for high-current DC applications and surface-mount assembly, supporting extended temperature operation and automotive qualification for use in demanding environments.
Features and Benefits:
• Maximum drain current of 90 A enables high-load switching capacity
• Low Rds(on) of 3.8 mΩ reduces conduction losses during operation
• Maximum power dissipation of 71 W supports sustained thermal load
• Gate charge of 46 nC allows predictable switching behaviour
• Drain-source voltage rating of 40 V protects against common voltage transients
• Forward diode voltage of 1.3 V limits drop during reverse conduction
• Low Rds(on) of 3.8 mΩ reduces conduction losses during operation
• Maximum power dissipation of 71 W supports sustained thermal load
• Gate charge of 46 nC allows predictable switching behaviour
• Drain-source voltage rating of 40 V protects against common voltage transients
• Forward diode voltage of 1.3 V limits drop during reverse conduction
Applications
• Suitable for electric motor drive stages in vehicles
• Ideal for high-current DC-DC converter outputs
• Used with power distribution modules in automotive electronics
• Can be used for synchronous rectification in power supplies
• Appropriate for battery management and charging circuits
• Ideal for high-current DC-DC converter outputs
• Used with power distribution modules in automotive electronics
• Can be used for synchronous rectification in power supplies
• Appropriate for battery management and charging circuits
What temperature range can this component tolerate in harsh use?
It operates reliably from −55 °C up to 175 °C.
How is it packaged for PCB assembly and board-level mounting?
It is supplied in a TO-252 surface-mount package for direct soldering.
What gate voltage extremes should be avoided to prevent damage?
Gate-to-source voltage must not exceed ±20 V to preserve gate integrity.
How many electrical connections does it present to the board?
It provides three pins for drain, gate and source connections on the PCB.
Related links
- Infineon IPD N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252 IPD90P04P4L04ATMA2
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252 IPD90P04P405ATMA2
- Infineon IPD Type N-Channel MOSFET 60 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T022S7AXTMA1
- Infineon IPD Type N-Channel MOSFET 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T022S7XTMA1
- Infineon IPD Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252
