Infineon IPD Type P-Channel MOSFET, 85 A, 40 V Enhancement, 3-Pin TO-252 IPD85P04P4L06ATMA2
- RS Stock No.:
- 229-1835
- Mfr. Part No.:
- IPD85P04P4L06ATMA2
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.135 04
(exc. VAT)
Kr.168 80
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 4 930 unit(s) shipping from 19. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | Kr. 13,504 | Kr. 135,04 |
| 50 - 90 | Kr. 12,824 | Kr. 128,24 |
| 100 - 240 | Kr. 12,287 | Kr. 122,87 |
| 250 - 490 | Kr. 11,749 | Kr. 117,49 |
| 500 + | Kr. 10,948 | Kr. 109,48 |
*price indicative
- RS Stock No.:
- 229-1835
- Mfr. Part No.:
- IPD85P04P4L06ATMA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 85A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 88W | |
| Forward Voltage Vf | -1.3V | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 6.22 mm | |
| Height | 2.3mm | |
| Length | 6.5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 85A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 88W | ||
Forward Voltage Vf -1.3V | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 6.22 mm | ||
Height 2.3mm | ||
Length 6.5mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon n channel logic level power MOSFET used for automotive applications. It has lowest switching and conduction power losses for highest thermal efficiency. It is robust packages with superior quality and reliability.
It is RoHS compliant and AEC qualified
It has 175°C operating temperature
Related links
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