Infineon IPD Type P-Channel MOSFET, -85 A, -40 V Enhancement TO-252 IPD85P04P407ATMA2
- RS Stock No.:
- 258-3867
- Mfr. Part No.:
- IPD85P04P407ATMA2
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.33 18
(exc. VAT)
Kr.41 48
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 4 580 unit(s) shipping from 19. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 16,59 | Kr. 33,18 |
| 20 - 48 | Kr. 15,045 | Kr. 30,09 |
| 50 - 98 | Kr. 13,955 | Kr. 27,91 |
| 100 - 198 | Kr. 12,985 | Kr. 25,97 |
| 200 + | Kr. 11,955 | Kr. 23,91 |
*price indicative
- RS Stock No.:
- 258-3867
- Mfr. Part No.:
- IPD85P04P407ATMA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -85A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 7.3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 88W | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, DIN IEC 68-1 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -85A | ||
Maximum Drain Source Voltage Vds -40V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 7.3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 88W | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, DIN IEC 68-1 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.
No charge pump required for high side drive
Simple interface drive circuit
Highest current capability
Related links
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- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252 IPD50P04P4L11ATMA2