Infineon IPD Type P-Channel MOSFET, -85 A, -40 V Enhancement TO-252 IPD85P04P407ATMA2

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Subtotal (1 pack of 2 units)*

Kr.33 18 

(exc. VAT)

Kr.41 48 

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 18Kr. 16,59Kr. 33,18
20 - 48Kr. 15,045Kr. 30,09
50 - 98Kr. 13,955Kr. 27,91
100 - 198Kr. 12,985Kr. 25,97
200 +Kr. 11,955Kr. 23,91

*price indicative

Packaging Options:
RS Stock No.:
258-3867
Mfr. Part No.:
IPD85P04P407ATMA2
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-85A

Maximum Drain Source Voltage Vds

-40V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Maximum Drain Source Resistance Rds

7.3mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

88W

Forward Voltage Vf

-1V

Typical Gate Charge Qg @ Vgs

69nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, DIN IEC 68-1

Automotive Standard

AEC-Q101

The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.

No charge pump required for high side drive

Simple interface drive circuit

Highest current capability

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