Infineon IPD Type P-Channel MOSFET, -50 A, -30 V Enhancement PG-TO-252

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Subtotal (1 reel of 2500 units)*

Kr.8 867 50 

(exc. VAT)

Kr.11 085 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 3,547Kr. 8 867,50

*price indicative

RS Stock No.:
258-3841
Mfr. Part No.:
IPD50P03P4L11ATMA2
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-50A

Maximum Drain Source Voltage Vds

-30V

Package Type

PG-TO-252

Series

IPD

Mount Type

Surface

Maximum Drain Source Resistance Rds

10.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

42nC

Forward Voltage Vf

-1V

Maximum Gate Source Voltage Vgs

-0.31 V

Maximum Power Dissipation Pd

58W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

DIN IEC 68-1, RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.

Simple interface drive circuit

World's lowest RDSon at 40V

Highest current capability

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