Infineon IPD Type P-Channel MOSFET, -80 A, -30 V Enhancement, 3-Pin PG-TO-252 IPD80P03P4L07ATMA2
- RS Stock No.:
- 258-3864
- Mfr. Part No.:
- IPD80P03P4L07ATMA2
- Brand:
- Infineon
Subtotal (1 pack of 2 units)*
Kr. 36,49
(exc. VAT)
Kr. 45,61
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- 1 824 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 + | Kr. 18,245 | Kr. 36,49 |
*price indicative
- RS Stock No.:
- 258-3864
- Mfr. Part No.:
- IPD80P03P4L07ATMA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -80A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | PG-TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 88W | |
| Forward Voltage Vf | -1.3V | |
| Maximum Gate Source Voltage Vgs | -0.31V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -80A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type PG-TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 88W | ||
Forward Voltage Vf -1.3V | ||
Maximum Gate Source Voltage Vgs -0.31V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.
No charge pump required for high side drive
Simple interface drive circuit
Highest current capability
Related links
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