Infineon IPD Type P-Channel MOSFET, -80 A, -30 V Enhancement, 3-Pin PG-TO-252 IPD80P03P4L07ATMA2

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Subtotal (1 pack of 2 units)*

Kr.34 89 

(exc. VAT)

Kr.43 612 

(inc. VAT)

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2 +Kr. 17,445Kr. 34,89

*price indicative

Packaging Options:
RS Stock No.:
258-3864
Mfr. Part No.:
IPD80P03P4L07ATMA2
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-80A

Maximum Drain Source Voltage Vds

-30V

Series

IPD

Package Type

PG-TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.8mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.3V

Maximum Gate Source Voltage Vgs

-0.31 V

Typical Gate Charge Qg @ Vgs

63nC

Maximum Power Dissipation Pd

88W

Maximum Operating Temperature

175°C

Standards/Approvals

DIN IEC 68-1, RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.

No charge pump required for high side drive

Simple interface drive circuit

Highest current capability

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