Infineon IPW Type N-Channel MOSFET, 69 A, 650 V, 3-Pin PG-TO-247

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Subtotal (1 tube of 30 units)*

Kr.2 381 01 

(exc. VAT)

Kr.2 976 27 

(inc. VAT)

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Units
Per unit
Per Tube*
30 - 30Kr. 79,367Kr. 2 381,01
60 - 60Kr. 75,397Kr. 2 261,91
90 +Kr. 72,225Kr. 2 166,75

*price indicative

RS Stock No.:
258-3910
Mfr. Part No.:
IPW65R029CFD7XKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

69A

Maximum Drain Source Voltage Vds

650V

Series

IPW

Package Type

PG-TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

29mΩ

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

145nC

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

305W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon 650V CoolMOS CFD7 super junction MOSFET in TO-247 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behaviour, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.

650V breakdown voltage

Significantly reduced switching losses compared to competition

Lowest RDS(on) dependency over temperature

Excellent hard-commutation ruggedness

Extra safety margin for designs with increased bus voltage

Enabling increased power density

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