Infineon IPW Type N-Channel MOSFET, 50 A, 650 V, 3-Pin TO-247

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Subtotal (1 tube of 30 units)*

Kr.2 626 98 

(exc. VAT)

Kr.3 283 74 

(inc. VAT)

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  • Plus 90 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Tube*
30 - 30Kr. 87,566Kr. 2 626,98
60 - 60Kr. 83,188Kr. 2 495,64
90 +Kr. 79,683Kr. 2 390,49

*price indicative

RS Stock No.:
258-3914
Mfr. Part No.:
IPW65R041CFD7XKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Series

IPW

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

41mΩ

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

102nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

227W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon 650V CoolMOS CFD7 super junction MOSFET TO-247 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behaviour, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.

Ultrafast body diode and very low Qrr

650V breakdown voltage

Significantly reduced switching losses compared to competition

Excellent hard-commutation ruggedness

Extra safety margin for designs with increased bus voltage

Enabling increased power density

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