Infineon HEXFET Type N-Channel MOSFET, 68 A, 80 V WDSON

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Subtotal (1 reel of 4800 units)*

Kr.50 937 60 

(exc. VAT)

Kr.63 672 00 

(inc. VAT)

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Units
Per unit
Per Reel*
4800 +Kr. 10,612Kr. 50 937,60

*price indicative

RS Stock No.:
258-3962
Mfr. Part No.:
IRF6646TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

68A

Maximum Drain Source Voltage Vds

80V

Series

HEXFET

Package Type

WDSON

Mount Type

Surface

Maximum Drain Source Resistance Rds

9.5mΩ

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

89W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

36nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes.

Application Specific MOSFETs

Ideal for High Performance Isolated Converter

Primary Switch Socket

Optimized for Synchronous Rectification

Low Conduction Losses

High Cdv/dt Immunity

Low Profile (<0.7mm)

Dual Sided Cooling Compatible

Compatible with existing Surface Mount Technique

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