Infineon HEXFET N-Channel MOSFET, 180 A, 30 V WDSON IRF6727MTRPBF
- RS Stock No.:
- 258-3968
- Mfr. Part No.:
- IRF6727MTRPBF
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (2 units, in packs of 2)*
Kr. 36,84
(exc. VAT)
Kr. 46,04
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- Shipping from 25 January 2027
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 18,42 | Kr. 36,84 |
| 20 - 48 | Kr. 15,215 | Kr. 30,43 |
| 50 - 98 | Kr. 14,355 | Kr. 28,71 |
| 100 - 198 | Kr. 13,27 | Kr. 26,54 |
| 200 + | Kr. 12,355 | Kr. 24,71 |
*price indicative
- RS Stock No.:
- 258-3968
- Mfr. Part No.:
- IRF6727MTRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | WDSON | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 2.4mΩ | |
| Forward Voltage Vf | 0.77V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 89W | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type WDSON | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 2.4mΩ | ||
Forward Voltage Vf 0.77V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 89W | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
High-current rating
Dual-side cooling capability
Low package height of 0.7mm
Compact form factor
High efficiency
Environmentally friendly
Related links
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