Infineon HEXFET Type N-Channel MOSFET, 180 A, 30 V WDSON IRF6727MTRPBF

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Subtotal (1 pack of 2 units)*

Kr.54 91 

(exc. VAT)

Kr.68 638 

(inc. VAT)

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Per Pack*
2 - 18Kr. 27,455Kr. 54,91
20 - 48Kr. 22,71Kr. 45,42
50 - 98Kr. 21,395Kr. 42,79
100 - 198Kr. 19,79Kr. 39,58
200 +Kr. 18,475Kr. 36,95

*price indicative

Packaging Options:
RS Stock No.:
258-3968
Mfr. Part No.:
IRF6727MTRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

30V

Package Type

WDSON

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

2.4mΩ

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

49nC

Maximum Power Dissipation Pd

89W

Forward Voltage Vf

0.77V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

High-current rating

Dual-side cooling capability

Low package height of 0.7mm

Compact form factor

High efficiency

Environmentally friendly

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