Infineon HEXFET Type N-Channel MOSFET, 68 A, 80 V WDSON IRF6646TRPBF

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Subtotal (1 pack of 2 units)*

Kr.51 02 

(exc. VAT)

Kr.63 78 

(inc. VAT)

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Per Pack*
2 - 18Kr. 25,51Kr. 51,02
20 - 48Kr. 22,995Kr. 45,99
50 - 98Kr. 21,395Kr. 42,79
100 - 198Kr. 19,965Kr. 39,93
200 +Kr. 18,645Kr. 37,29

*price indicative

Packaging Options:
RS Stock No.:
258-3963
Mfr. Part No.:
IRF6646TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

68A

Maximum Drain Source Voltage Vds

80V

Series

HEXFET

Package Type

WDSON

Mount Type

Surface

Maximum Drain Source Resistance Rds

9.5mΩ

Minimum Operating Temperature

-40°C

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

89W

Typical Gate Charge Qg @ Vgs

36nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes.

Application Specific MOSFETs

Ideal for High Performance Isolated Converter

Primary Switch Socket

Optimized for Synchronous Rectification

Low Conduction Losses

High Cdv/dt Immunity

Low Profile (<0.7mm)

Dual Sided Cooling Compatible

Compatible with existing Surface Mount Technique

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