Infineon HEXFET MOSFET, 6.6 A, 100 V, 5-Pin TO-220
- RS Stock No.:
- 258-3977
- Mfr. Part No.:
- IRFI4212H-117PXKMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
Kr.690 25
(exc. VAT)
Kr.862 80
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 800 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | Kr. 13,805 | Kr. 690,25 |
| 100 - 200 | Kr. 11,182 | Kr. 559,10 |
| 250 - 450 | Kr. 10,492 | Kr. 524,60 |
| 500 - 950 | Kr. 9,939 | Kr. 496,95 |
| 1000 + | Kr. 9,525 | Kr. 476,25 |
*price indicative
- RS Stock No.:
- 258-3977
- Mfr. Part No.:
- IRFI4212H-117PXKMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 58mΩ | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 58mΩ | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Integrated half-bridge package
High efficiency and THD
Low EMI
Environmentally friendly
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