Infineon BSZ Type N-Channel MOSFET, 102 A, 30 V N, 8-Pin TSDSON BSZ0902NSIATMA1
- RS Stock No.:
- 259-1484
- Mfr. Part No.:
- BSZ0902NSIATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.69 17
(exc. VAT)
Kr.86 46
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- Final 4 970 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 13,834 | Kr. 69,17 |
| 50 - 120 | Kr. 11,052 | Kr. 55,26 |
| 125 - 245 | Kr. 10,364 | Kr. 51,82 |
| 250 - 495 | Kr. 9,656 | Kr. 48,28 |
| 500 + | Kr. 5,056 | Kr. 25,28 |
*price indicative
- RS Stock No.:
- 259-1484
- Mfr. Part No.:
- BSZ0902NSIATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 102A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSDSON | |
| Series | BSZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.8Ω | |
| Channel Mode | N | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 102A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSDSON | ||
Series BSZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.8Ω | ||
Channel Mode N | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon power MOSFET has ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in servers, Datacom and telecom applications. It is tailored to the needs of power management in notebook by improved EMI behaviour, as well as increased battery life.
Ultra low gate and output charge
Lowest on-state resistance in small footprint packages
Easy to design in
Increased battery lifetime
Improved EMI behaviour making external snubber networks obsolete
Saving costs
Saving space
Reducing power losses
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