Infineon IPD Type N-Channel MOSFET, 126 A, 600 V N HDSOP IPDQ60R065S7XTMA1

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Kr.66 34 

(exc. VAT)

Kr.82 92 

(inc. VAT)

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1 - 9Kr. 66,34
10 - 24Kr. 59,83
25 - 49Kr. 56,40
50 - 99Kr. 52,40
100 +Kr. 48,28

*price indicative

Packaging Options:
RS Stock No.:
260-1204
Mfr. Part No.:
IPDQ60R065S7XTMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

126A

Maximum Drain Source Voltage Vds

600V

Series

IPD

Package Type

HDSOP

Mount Type

Surface

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

N

Maximum Power Dissipation Pd

195W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.82V

Typical Gate Charge Qg @ Vgs

51nC

Maximum Operating Temperature

150°C

Height

2.35mm

Standards/Approvals

RoHS

Length

15.5mm

Width

15.1 mm

Automotive Standard

No

The Infineon MOSFET enables the best price performance for low frequency switching applications. CoolMOS S7 boasts the lowest Rdson values for a HV SJ MOSFET, with distinctive increase of energy efficiency. CoolMOS S7 is optimized for “static switching” and high current applications. It is an ideal fit for solid state relay and circuit breaker designs as well as for line rectification in SMPS and inverter topologies.

High pulse current capability

Increased system performance

More compact and easier design

Lower BOM or/and TCO over prolonged life time

Shock & vibration resistance

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