STMicroelectronics Type N-Channel MOSFET, 30 A, 650 V Enhancement, 7-Pin Tape & Reel
- RS Stock No.:
- 261-5041
- Mfr. Part No.:
- SCT055HU65G3AG
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 reel of 600 units)*
Kr.70 115 40
(exc. VAT)
Kr.87 644 40
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 28. desember 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 600 - 600 | Kr. 116,859 | Kr. 70 115,40 |
| 1200 + | Kr. 113,938 | Kr. 68 362,80 |
*price indicative
- RS Stock No.:
- 261-5041
- Mfr. Part No.:
- SCT055HU65G3AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | Tape & Reel | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 3.5mm | |
| Standards/Approvals | No | |
| Width | 14 mm | |
| Length | 18.58mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type Tape & Reel | ||
Mount Type Surface | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 150°C | ||
Height 3.5mm | ||
Standards/Approvals No | ||
Width 14 mm | ||
Length 18.58mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MA
Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HU3PAK package
The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
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