STMicroelectronics Type N-Channel MOSFET, 30 A, 650 V Enhancement, 7-Pin Tape & Reel SCT055HU65G3AG
- RS Stock No.:
- 261-5043
- Mfr. Part No.:
- SCT055HU65G3AG
- Brand:
- STMicroelectronics
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Subtotal (1 unit)*
Kr.139 45
(exc. VAT)
Kr.174 31
(inc. VAT)
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In Stock
- 403 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 1 | Kr. 139,45 |
| 2 + | Kr. 132,48 |
*price indicative
- RS Stock No.:
- 261-5043
- Mfr. Part No.:
- SCT055HU65G3AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | Tape & Reel | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 18.58mm | |
| Width | 14 mm | |
| Height | 3.5mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type Tape & Reel | ||
Mount Type Surface | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 18.58mm | ||
Width 14 mm | ||
Height 3.5mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MA
Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HU3PAK package
The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
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