Infineon iPB Type N-Channel MOSFET, 190 A, 60 V Enhancement, 3-Pin TO-263 IPB013N06NF2SATMA1

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Subtotal (1 pack of 2 units)*

Kr.89 32 

(exc. VAT)

Kr.111 64 

(inc. VAT)

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Per Pack*
2 - 18Kr. 44,66Kr. 89,32
20 - 48Kr. 40,21Kr. 80,42
50 - 98Kr. 37,465Kr. 74,93
100 - 198Kr. 34,89Kr. 69,78
200 +Kr. 32,605Kr. 65,21

*price indicative

Packaging Options:
RS Stock No.:
262-5848
Mfr. Part No.:
IPB013N06NF2SATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

190A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

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