Infineon iPB Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-263 IPB029N06NF2SATMA1

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Subtotal (1 pack of 5 units)*

Kr.99 80 

(exc. VAT)

Kr.124 75 

(inc. VAT)

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  • 550 unit(s) ready to ship
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Units
Per unit
Per Pack*
5 - 45Kr. 19,96Kr. 99,80
50 - 120Kr. 18,144Kr. 90,72
125 - 245Kr. 16,976Kr. 84,88
250 - 495Kr. 15,764Kr. 78,82
500 +Kr. 14,574Kr. 72,87

*price indicative

Packaging Options:
RS Stock No.:
262-5859
Mfr. Part No.:
IPB029N06NF2SATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

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