Infineon iPB Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-263 IPB029N06NF2SATMA1

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Subtotal (1 pack of 5 units)*

Kr.68 64 

(exc. VAT)

Kr.85 80 

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45Kr. 13,728Kr. 68,64
50 - 120Kr. 12,492Kr. 62,46
125 - 245Kr. 11,692Kr. 58,46
250 - 495Kr. 10,846Kr. 54,23
500 +Kr. 10,022Kr. 50,11

*price indicative

Packaging Options:
RS Stock No.:
262-5859
Mfr. Part No.:
IPB029N06NF2SATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

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