Microchip TN0610 Type N-Channel MOSFET, 500 A, 100 V Enhancement, 3-Pin TO-92

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Subtotal (1 bag of 1000 units)*

Kr.9 843 00 

(exc. VAT)

Kr.12 304 00 

(inc. VAT)

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RS Stock No.:
264-8911
Mfr. Part No.:
TN0610N3-G
Brand:
Microchip
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Brand

Microchip

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

500A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-92

Series

TN0610

Mount Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Microchip N-Channel low threshold enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Low threshold - 2.0V max.

High input impedance

Low input capacitance - 100pF typical

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

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