Microchip Type N-Channel MOSFET, 4 A, 400 V MOSFET, 3-Pin TO-252 TN2640K4-G

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Subtotal (1 pack of 2 units)*

Kr.58 80 

(exc. VAT)

Kr.73 50 

(inc. VAT)

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2 - 48Kr. 29,40Kr. 58,80
50 - 98Kr. 24,655Kr. 49,31
100 - 248Kr. 22,08Kr. 44,16
250 - 998Kr. 21,68Kr. 43,36
1000 +Kr. 21,28Kr. 42,56

*price indicative

Packaging Options:
RS Stock No.:
264-8923
Mfr. Part No.:
TN2640K4-G
Brand:
Microchip
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Brand

Microchip

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

400V

Package Type

TO-252

Mount Type

Through Hole

Pin Count

3

Channel Mode

MOSFET

Maximum Power Dissipation Pd

0.36W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Microchip N-Channel low threshold enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Low threshold (2.0V max.)

High input impedance

Low input capacitance

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

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