Microchip VN2110 Type N-Channel MOSFET, 0.6 A, 100 V MOSFET, 3-Pin SOT-23 VN2110K1-G

RS Stock No.:: 264-8943
Mfr. Part No.:: VN2110K1-G
Brand:: Microchip

Microchip VN2110 Type N-Channel MOSFET, 0.6 A, 100 V MOSFET, 3-Pin SOT-23 VN2110K1-G

Bulk discount available

Subtotal (1 pack of 10 units)*

Kr.65 89

(exc. VAT)

Kr.82 36

(inc. VAT)

FREE delivery for online orders over 500,00 kr

In Stock

2 220 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 - 40	Kr. 6,589	Kr. 65,89
50 - 90	Kr. 6,452	Kr. 64,52
100 - 240	Kr. 3,489	Kr. 34,89
250 - 990	Kr. 3,432	Kr. 34,32
1000 +	Kr. 3,352	Kr. 33,52

*price indicative

RS Stock No.:: 264-8943
Mfr. Part No.:: VN2110K1-G
Brand:: Microchip

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Microchip
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	0.6A
	Maximum Drain Source Voltage Vds	100V
	Series	VN2110
	Package Type	SOT-23
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	6Ω
	Channel Mode	MOSFET
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	0.36W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	1.12mm
	Width	1.3 mm
	Length	2.9mm
	Automotive Standard	No

	Select all
	Brand Microchip
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 0.6A
	Maximum Drain Source Voltage Vds 100V
	Series VN2110
	Package Type SOT-23
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 6Ω
	Channel Mode MOSFET
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 0.36W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 1.12mm
	Width 1.3 mm
	Length 2.9mm
	Automotive Standard No

Datasheet - VN2110K1-G

The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low CISS and fast switching speeds

High input impedance and high gain

Microchip VN2110 Type N-Channel MOSFET, 0.6 A, 100 V MOSFET, 3-Pin SOT-23 VN2110K1-G

FREE delivery for online orders over 500,00 kr

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