Microchip VN2110 Type N-Channel MOSFET, 0.6 A, 100 V MOSFET, 3-Pin SOT-23

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Subtotal (1 reel of 3000 units)*

Kr.14 745 00 

(exc. VAT)

Kr.18 432 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 4,915Kr. 14 745,00

*price indicative

RS Stock No.:
264-8942
Mfr. Part No.:
VN2110K1-G
Brand:
Microchip
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Brand

Microchip

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

0.6A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-23

Series

VN2110

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

6Ω

Channel Mode

MOSFET

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

0.36W

Maximum Operating Temperature

150°C

Width

1.3 mm

Standards/Approvals

No

Height

1.12mm

Length

2.9mm

Automotive Standard

No

The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low CISS and fast switching speeds

High input impedance and high gain

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