Vishay SIHB Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-263 SIHB085N60EF-GE3
- RS Stock No.:
- 268-8291
- Mfr. Part No.:
- SIHB085N60EF-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tube of 50 units)*
Kr.2 625 95
(exc. VAT)
Kr.3 282 45
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- 1 000 unit(s) shipping from 07. mai 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | Kr. 52,519 | Kr. 2 625,95 |
| 100 - 450 | Kr. 42,959 | Kr. 2 147,95 |
| 500 - 950 | Kr. 36,553 | Kr. 1 827,65 |
| 1000 + | Kr. 32,876 | Kr. 1 643,80 |
*price indicative
- RS Stock No.:
- 268-8291
- Mfr. Part No.:
- SIHB085N60EF-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SIHB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 184W | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SIHB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 184W | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 10.67mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay EF series power MOSFET with fast body diode and 4 generation E series technology. It has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correctio
Low effective capacitance
Avalanche energy rated
Low figure of merit
Related links
- Vishay Dual Silicon N-Channel MOSFET 650 V, 3-Pin D2PAK SIHB085N60EF-GE3
- Vishay Dual Silicon N-Channel MOSFET 650 V, 3-Pin TO-220AB SIHP085N60EF-GE3
- Vishay Dual Silicon N-Channel MOSFET 650 V, 3-Pin TO-247AC SIHG085N60EF-GE3
- Vishay Dual Silicon N-Channel MOSFET 40 V, 8-Pin 1212-8 SIS9446DN-T1-GE3
- Vishay Dual Silicon N-Channel MOSFET 600 V, 3-Pin D2PAK SIHB080N60E-GE3
- Vishay Dual Silicon N-Channel MOSFET 650 V, 3-Pin TO-220AB SIHP150N60E-GE3
- Vishay Dual Silicon N-Channel MOSFET 650 V, 3-Pin TO-247AC SIHG150N60E-GE3
- Vishay Dual Silicon N-Channel MOSFET 650 V, 8-Pin PowerPAK SO-8DC SIHA150N60E-GE3