Vishay SIHB Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-263 SIHB085N60EF-GE3

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Subtotal (1 pack of 2 units)*

Kr.195 85 

(exc. VAT)

Kr.244 812 

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8Kr. 97,925Kr. 195,85
10 - 18Kr. 88,09Kr. 176,18
20 - 98Kr. 86,26Kr. 172,52
100 - 498Kr. 72,07Kr. 144,14
500 +Kr. 61,32Kr. 122,64

*price indicative

Packaging Options:
RS Stock No.:
268-8293
Mfr. Part No.:
SIHB085N60EF-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

34A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-263

Series

SIHB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.084Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±30 V

Typical Gate Charge Qg @ Vgs

63nC

Maximum Power Dissipation Pd

184W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

10.67mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay EF series power MOSFET with fast body diode and 4 generation E series technology. It has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correctio

Low effective capacitance

Avalanche energy rated

Low figure of merit

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