Vishay SIHH Type N-Channel MOSFET, 30 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH085N60EF-T1GE3
- RS Stock No.:
- 268-8301
- Mfr. Part No.:
- SIHH085N60EF-T1GE3
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
Kr. 109,60
(exc. VAT)
Kr. 137,00
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 3 000 unit(s) shipping from 22 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 49 | Kr. 109,60 |
| 50 - 99 | Kr. 98,61 |
| 100 - 249 | Kr. 80,77 |
| 250 + | Kr. 79,05 |
*price indicative
- RS Stock No.:
- 268-8301
- Mfr. Part No.:
- SIHH085N60EF-T1GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 8 x 8 | |
| Series | SIHH | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.085Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 184W | |
| Maximum Operating Temperature | 150°C | |
| Length | 8mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 8 x 8 | ||
Series SIHH | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.085Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 184W | ||
Maximum Operating Temperature 150°C | ||
Length 8mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
Vishay SIHH Series MOSFET, 650V Drain Source Voltage, 30A Drain Current - SIHH085N60EF-T1GE3
This n-channel MOSFET is a high-voltage switching device designed for use in power conversion and control systems within industrial and automation environments. It operates across a wide temperature range and is intended for surface-mounted assemblies where robust high-voltage handling and efficient switching are required.
Features and Benefits:
• 650V drain rating enabling high-voltage switching capability • 30A continuous drain current supporting sustained load operation • 0.085Ω Rds(on) reducing conduction losses in power paths • 63nC typical gate charge allowing predictable switching performance • 184W power dissipation for high thermal load handling • 150°C maximum junction temperature for elevated temperature use
Applications
• Suitable for industrial motor drive inverters requiring high-voltage devices • Used for power supplies in automation equipment with high switching demands • Ideal for switch-mode converters handling significant power dissipation • Can be used for high-voltage relay replacement in electrical control panels
What mounting style does it require on a board?
It is supplied in a PowerPAK 8x8 surface-mount package requiring compatible solder land patterns for thermal and electrical connection.
How does the gate voltage limit affect control circuitry?
The gate must be driven within ±30V to prevent gate dielectric stress, so gate drivers should provide appropriate voltage margins and protection.
What thermal conditions should be considered during design?
With a 184W dissipation rating and 150°C maximum operating temperature, thermal management such as heat spreading and adequate PCB copper is necessary to maintain safe junction temperatures.
What pin configuration complexity should designers expect?
The device has four pins, which require correct assignment in layout to ensure low-inductance connections for drain, source and gate functions.
Related links
- Vishay SIHH Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH085N60EF-T1GE3
- Vishay SIHH Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH250N60EF-T1GE3
- Vishay SIHH Type N-Channel MOSFET 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH155N60EF-T1GE3
- Vishay SIHH Type N-Channel MOSFET 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH150N60E-T1-GE3
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH125N60EF-T1GE3
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH186N60EF-T1GE3
