Vishay SIS Type N-Channel MOSFET, 8.8 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 SIS112LDN-T1-GE3
- RS Stock No.:
- 268-8340
- Mfr. Part No.:
- SIS112LDN-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 25 units)*
Kr.163 70
(exc. VAT)
Kr.204 625
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 6 000 unit(s) shipping from 16. februar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | Kr. 6,548 | Kr. 163,70 |
| 50 - 75 | Kr. 6,42 | Kr. 160,50 |
| 100 - 225 | Kr. 4,887 | Kr. 122,18 |
| 250 - 975 | Kr. 4,786 | Kr. 119,65 |
| 1000 + | Kr. 2,965 | Kr. 74,13 |
*price indicative
- RS Stock No.:
- 268-8340
- Mfr. Part No.:
- SIS112LDN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8.8A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SIS | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.119Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 19.8W | |
| Typical Gate Charge Qg @ Vgs | 11.8nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8.8A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SIS | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.119Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 19.8W | ||
Typical Gate Charge Qg @ Vgs 11.8nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N channel TrenchFET generation 4 power MOSFET is single configuration MOSFET. It is lead free and halogen free and It is used an application as primary side switch, motor drive switch and boost converter.
Tuned for the lowest figure of merit
ROHS compliant
UIS tested 100 percent
Related links
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