Infineon OptiMOS Type N-Channel MOSFET, 6 A, 650 V Enhancement, 3-Pin TO-263 IPB65R660CFDAATMA1

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Subtotal (1 reel of 1000 units)*

Kr. 8 045,00

(exc. VAT)

Kr. 10 056,00

(inc. VAT)

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Units
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Per Reel*
1000 +Kr. 8,045Kr. 8 045,00

*price indicative

RS Stock No.:
273-2999
Mfr. Part No.:
IPB65R660CFDAATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-263

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.66Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

20nC

Maximum Power Dissipation Pd

62.5W

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon 650V cool MOS CFDA super junction MOSFET is Infineon's second generation of market leading automotive qualified high voltage cool MOS power MOSFETs. In addition to the well known attributes of high quality and reliability required by the auto

Reduced EMI appearance and easy to design in

Better light load efficiency

Lower switching losses

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