Infineon IPU Type N-Channel MOSFET, 9 A, 950 V Enhancement, 3-Pin PG-TO251-3
- RS Stock No.:
- 273-3024
- Mfr. Part No.:
- IPU95R750P7AKMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.94 97
(exc. VAT)
Kr.118 71
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 1 490 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | Kr. 18,994 | Kr. 94,97 |
| 10 - 20 | Kr. 17,252 | Kr. 86,26 |
| 25 - 45 | Kr. 15,832 | Kr. 79,16 |
| 50 - 95 | Kr. 14,666 | Kr. 73,33 |
| 100 + | Kr. 13,544 | Kr. 67,72 |
*price indicative
- RS Stock No.:
- 273-3024
- Mfr. Part No.:
- IPU95R750P7AKMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Package Type | PG-TO251-3 | |
| Series | IPU | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.75Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Power Dissipation Pd | 73W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, JEDEC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 950V | ||
Package Type PG-TO251-3 | ||
Series IPU | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.75Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Power Dissipation Pd 73W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, JEDEC | ||
Automotive Standard No | ||
The Infineon power MOSFET is designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V Cool MOS P7 technology focuses on the low power SMPS market. The integrated diode considerably improves ESD robustness, thus reduci
Easy to drive and to design in
Better production yield by reducing ESD related failures
Less production issues and reduced field returns
Related links
- Infineon N-Channel MOSFET 950 V, 3-Pin IPAK IPU95R750P7AKMA1
- Infineon MOSFET IGLD60R070D1AUMA3
- Infineon MOSFET IPD079N06L3GATMA1
- Infineon MOSFET Transistor, 3.7 A PG-TO 252 IPD60R2K1CEAUMA1
- Infineon MOSFET Transistor, 50 A PG-TO 247 IPW60R040C7XKSA1
- Infineon MOSFET Transistor, 15.1 A PG-TO 252 IPD65R400CEAUMA1
- Infineon MOSFET Transistor, 18.1 A PG-TO 252 IPD50R280CEAUMA1
- Infineon MOSFET Transistor, 24 A PG-TO 247 IPW65R095C7XKSA1
