Infineon HEXFET Type N-Channel MOSFET, 183 A, 75 V Enhancement, 3-Pin

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Subtotal (1 pack of 2 units)*

Kr.56 91 

(exc. VAT)

Kr.71 138 

(inc. VAT)

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Units
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Per Pack*
2 - 8Kr. 28,455Kr. 56,91
10 - 48Kr. 25,795Kr. 51,59
50 - 98Kr. 21,795Kr. 43,59
100 - 248Kr. 20,305Kr. 40,61
250 +Kr. 19,965Kr. 39,93

*price indicative

RS Stock No.:
273-3032
Mfr. Part No.:
IRFS7734TRLPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

183A

Maximum Drain Source Voltage Vds

75V

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

270nC

Maximum Power Dissipation Pd

290W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, Lead-Free

The Infineon single N-channel HEXFET power MOSFET in a D2-Pak package is optimized for broadest availability from distribution partners.

Product qualification according to JEDEC standard

Softer body diode compared to previous silicon generation

Industry standard surface-mount power package

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