Infineon HEXFET Type N-Channel Power MOSFET, 75 A, 75 V Enhancement, 3-Pin TO-263 IRF2807ZSTRLPBF

RS Stock No.:: 831-2806
Mfr. Part No.:: IRF2807ZSTRLPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel Power MOSFET, 75 A, 75 V Enhancement, 3-Pin TO-263 IRF2807ZSTRLPBF

Bulk discount available

Subtotal (1 pack of 10 units)*

Kr.214 27

(exc. VAT)

Kr.267 84

(inc. VAT)

FREE delivery for online orders over 500,00 kr

Temporarily out of stock

30 unit(s) shipping from 29. desember 2025

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Units	Per unit	Per Pack*
10 - 40	Kr. 21,427	Kr. 214,27
50 - 90	Kr. 17,137	Kr. 171,37
100 - 240	Kr. 16,073	Kr. 160,73
250 - 490	Kr. 14,78	Kr. 147,80
500 +	Kr. 13,717	Kr. 137,17

*price indicative

RS Stock No.:: 831-2806
Mfr. Part No.:: IRF2807ZSTRLPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	75A
	Maximum Drain Source Voltage Vds	75V
	Series	HEXFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	9.4mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	71nC
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Power Dissipation Pd	300W
	Maximum Operating Temperature	175°C
	Width	9.65 mm
	Standards/Approvals	No
	Length	10.67mm
	Height	4.83mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 75A
	Maximum Drain Source Voltage Vds 75V
	Series HEXFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 9.4mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 71nC
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Power Dissipation Pd 300W
	Maximum Operating Temperature 175°C
	Width 9.65 mm
	Standards/Approvals No
	Length 10.67mm
	Height 4.83mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 89A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRF2807ZSTRLPBF

This MOSFET is designed for high-performance switching applications, offering efficiency and reliability across various electronic circuits. Its low on-resistance and strong thermal characteristics make it essential for users in automation, electrical, and mechanical sectors, enabling effective power management and reduced energy loss.

Features & Benefits

• Continuous drain current up to 89A

• Maximum drain-source voltage of 75V

• Operating temperature up to +175°C for thermal stability

• Low Rds(on) of 9.4 mΩ to reduce power loss

• Quick switching abilities enhance system responsiveness

• Enhancement mode device for optimal operation

Applications

• Used in power supply circuits for efficient energy conversion

• Employed in automotive and industrial systems for motor control

• Suitable for DC-DC converters and switching regulators

• Applicable in high-frequency switching in electronics

• Utilised for overload protection in various electrical systems

What is the maximum gate-source voltage this component can handle?

It can manage a maximum gate-source voltage of ±20V, ensuring compatibility with diverse control signals.

How does this component perform under high temperatures?

With a maximum operating temperature of +175°C, it remains stable and functional in high-temperature environments, making it suitable for such applications.

What is the purpose of the low on-resistance feature?

The low on-resistance minimises heat generation and enhances efficiency during operation, which is important for high current applications.

Can it be used in both surface mount and through-hole designs?

This device is specifically designed for surface mount technology in a D2PAK package, optimising space and thermal performance.

How does the switching speed benefit system design?

Fast switching improves overall system efficiency and allows for Compact design by facilitating higher frequency operation in power management solutions.