Vishay SIA Type N-Channel MOSFET, 8.8 A, 100 V Enhancement, 7-Pin SC-70-6L

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Subtotal (1 reel of 3000 units)*

Kr.9 204 00 

(exc. VAT)

Kr.11 505 00 

(inc. VAT)

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Per Reel*
3000 +Kr. 3,068Kr. 9 204,00

*price indicative

RS Stock No.:
279-9899
Mfr. Part No.:
SIA112LDJ-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8.8A

Maximum Drain Source Voltage Vds

100V

Package Type

SC-70-6L

Series

SIA

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

0.119Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

5.4nC

Maximum Power Dissipation Pd

15.6W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Length

2.05mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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