Vishay SIHP Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220AB SIHP074N65E-GE3

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Subtotal (1 unit)*

Kr.97 13 

(exc. VAT)

Kr.121 41 

(inc. VAT)

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1 - 9Kr. 97,13
10 - 24Kr. 95,18
25 - 99Kr. 93,35
100 +Kr. 91,29

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Packaging Options:
RS Stock No.:
279-9924
Mfr. Part No.:
SIHP074N65E-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

650V

Series

SIHP

Package Type

TO-220AB

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.078Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

250W

Typical Gate Charge Qg @ Vgs

8nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a E series power MOSFET and the transistor in it is made up of material known as silicon.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance

Avalanche energy rated

Reduced switching and conduction losses

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