Vishay SIJH Type N-Channel MOSFET, 277 A, 100 V Enhancement, 4-Pin 8x8L SIJH5100E-T1-GE3
- RS Stock No.:
- 279-9938
- Mfr. Part No.:
- SIJH5100E-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 unit)*
Kr.74 82
(exc. VAT)
Kr.93 52
(inc. VAT)
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In Stock
- 2 000 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 49 | Kr. 74,82 |
| 50 - 99 | Kr. 73,44 |
| 100 - 249 | Kr. 67,38 |
| 250 - 999 | Kr. 66,12 |
| 1000 + | Kr. 64,75 |
*price indicative
- RS Stock No.:
- 279-9938
- Mfr. Part No.:
- SIJH5100E-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 277A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | 8x8L | |
| Series | SIJH | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.00189Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 128nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 333W | |
| Maximum Operating Temperature | 150°C | |
| Length | 7.9mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 277A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type 8x8L | ||
Series SIJH | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.00189Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 128nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 333W | ||
Maximum Operating Temperature 150°C | ||
Length 7.9mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
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