Vishay SiJ462ADP N-Channel MOSFET, 39.3 A, 60 V Enhancement, 4-Pin SO-8 SiJ462ADP-T1-GE3
- RS Stock No.:
- 204-7214
- Mfr. Part No.:
- SiJ462ADP-T1-GE3
- Brand:
- Vishay
Subtotal (1 reel of 3000 units)*
Kr. 23 817,00
(exc. VAT)
Kr. 29 772,00
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- Shipping from 29 October 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | Kr. 7,939 | Kr. 23 817,00 |
*price indicative
- RS Stock No.:
- 204-7214
- Mfr. Part No.:
- SiJ462ADP-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 39.3A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8 | |
| Series | SiJ462ADP | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 7.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Power Dissipation Pd | 22.3W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.25mm | |
| Height | 6.25mm | |
| Standards/Approvals | No | |
| Width | 1.14mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 39.3A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8 | ||
Series SiJ462ADP | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 7.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Power Dissipation Pd 22.3W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Length 5.25mm | ||
Height 6.25mm | ||
Standards/Approvals No | ||
Width 1.14mm | ||
Automotive Standard No | ||
The Vishay N-Channel 60 V (D-S) MOSFET has a very low Qg and Qoss reduce power loss and improve efficiency. It's flexible leads provide resilience to mechanical stress.
TrenchFET Gen IV power MOSFET
100 % Rg and UIS tested
Related links
- Vishay SiJ462ADP N-Channel MOSFET 60 V Enhancement, 4-Pin SO-8 SiJ462ADP-T1-GE3
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 4-Pin PowerPAK SIHH26N60E-T1-GE3
- Vishay E Type N-Channel Power MOSFET 600 V Enhancement, 4-Pin PowerPAK SIHM080N60E-T1-GE3
- Vishay E Type N-Channel Power MOSFET 600 V Enhancement, 4-Pin PowerPAK
- Vishay SIJH Type N-Channel MOSFET 100 V Enhancement, 4-Pin 8x8L SIJH5100E-T1-GE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 45 V Enhancement, 4-Pin SO-8 SIJ150DP-T1-GE3
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH240N60E-T1-GE3
- Vishay SIJ4406DP Type N-Channel Single MOSFETs 40 V Enhancement, 4-Pin PowerPAK