Vishay SIHM080N60E Type N-Channel Single MOSFETs, 51 A, 600 V Enhancement, 4-Pin PowerPAK SIHM080N60E-T1-GE3

Subtotal (1 reel of 3000 units)*

Kr.179 205 00 

(exc. VAT)

Kr.224 007 00 

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible
Units
Per unit
Per Reel*
3000 +Kr. 59,735Kr. 179 205,00

*price indicative

RS Stock No.:
653-177
Mfr. Part No.:
SIHM080N60E-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

51A

Maximum Drain Source Voltage Vds

600V

Package Type

PowerPAK

Series

SIHM080N60E

Mount Type

PCB

Pin Count

4

Maximum Drain Source Resistance Rds

0.084Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

500W

Typical Gate Charge Qg @ Vgs

42nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Width

7.9 mm

Standards/Approvals

No

Length

8mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay Power MOSFET is a 4th generation E Series MOSFET designed for high-efficiency switching in demanding applications. It features a low figure of merit (FOM), reduced effective capacitance, and optimized thermal performance. Packaged in PowerPAK 8x8L, it's Ideal for server, telecom, SMPS, and power factor correction supplies.

Pb Free

Halogen free

RoHS compliant

Related links