Vishay SISS Type P-Channel MOSFET, 59.2 A, 40 V Enhancement, 8-Pin 1212-8S SISS4409DN-T1-GE3
- RS Stock No.:
- 279-9987
- Mfr. Part No.:
- SISS4409DN-T1-GE3
- Brand:
- Vishay
Subtotal (1 reel of 3000 units)*
Kr. 18 450,00
(exc. VAT)
Kr. 23 070,00
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 3 000 unit(s) shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | Kr. 6,15 | Kr. 18 450,00 |
*price indicative
- RS Stock No.:
- 279-9987
- Mfr. Part No.:
- SISS4409DN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 59.2A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SISS | |
| Package Type | 1212-8S | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.009Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 126nC | |
| Maximum Power Dissipation Pd | 56.8W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 59.2A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SISS | ||
Package Type 1212-8S | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.009Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 126nC | ||
Maximum Power Dissipation Pd 56.8W | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.
New generation power MOSFET
100 percent Rg and UIS tested
Ultra low RDS x Qg FOM product
Fully lead (Pb)-free device
Related links
- Vishay SISS Type P-Channel MOSFET 40 V Enhancement, 8-Pin 1212-8S SISS4409DN-T1-GE3
- Vishay SISS Type N-Channel MOSFET 100 V Enhancement, 8-Pin 1212-8S
- Vishay SISS Type N-Channel MOSFET 100 V Enhancement, 8-Pin 1212-8S
- Vishay SISS Type N-Channel MOSFET 80 V Enhancement, 8-Pin 1212-8S SISS5808DN-T1-GE3
- Vishay SISS Type N-Channel MOSFET 40 V Enhancement, 8-Pin 1212-8S SISS4402DN-T1-GE3
- Vishay SISS Type N-Channel MOSFET 100 V Enhancement, 8-Pin 1212-8S SISS5108DN-T1-GE3
- Vishay SISS Type N-Channel MOSFET 100 V Enhancement, 8-Pin 1212-8S SISS5110DN-T1-GE3
- Vishay SISS Type N-Channel MOSFET 100 V Enhancement, 8-Pin 1212-8S SISS5112DN-T1-GE3