Vishay SISS N-Channel MOSFET, 66.6 A, 80 V Enhancement, 8-Pin 1212-8S SISS5808DN-T1-GE3

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Subtotal (1 pack of 4 units)*

Kr. 104,45

(exc. VAT)

Kr. 130,56

(inc. VAT)

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Units
Per unit
Per Pack*
4 - 56Kr. 26,113Kr. 104,45
60 - 96Kr. 25,568Kr. 102,27
100 - 236Kr. 25,053Kr. 100,21
240 - 996Kr. 24,54Kr. 98,16
1000 +Kr. 23,995Kr. 95,98

*price indicative

Packaging Options:
RS Stock No.:
280-0003
Mfr. Part No.:
SISS5808DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

66.6A

Maximum Drain Source Voltage Vds

80V

Package Type

1212-8S

Series

SISS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00745Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

24nC

Maximum Power Dissipation Pd

65.7W

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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