Vishay SISS Type N-Channel MOSFET, 40.7 A, 100 V Enhancement, 8-Pin 1212-8S

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Subtotal (1 reel of 3000 units)*

Kr.21 465 00 

(exc. VAT)

Kr.26 832 00 

(inc. VAT)

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Per Reel*
3000 +Kr. 7,155Kr. 21 465,00

*price indicative

RS Stock No.:
279-9995
Mfr. Part No.:
SISS5112DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40.7A

Maximum Drain Source Voltage Vds

100V

Package Type

1212-8S

Series

SISS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0149Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

16nC

Maximum Power Dissipation Pd

52W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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