Vishay IRF840 Type N-Channel Power MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-220AB IRF840PBF
- RS Stock No.:
- 281-6028
- Distrelec Article No.:
- 304-42-105
- Mfr. Part No.:
- IRF840PBF
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
Kr. 149,64
(exc. VAT)
Kr. 187,05
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 135 unit(s) shipping from 22 June 2026
- Plus 120 unit(s) shipping from 22 June 2026
- Plus 590 unit(s) shipping from 29 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 29,928 | Kr. 149,64 |
| 50 - 95 | Kr. 27,182 | Kr. 135,91 |
| 100 - 245 | Kr. 26,106 | Kr. 130,53 |
| 250 - 495 | Kr. 24,436 | Kr. 122,18 |
| 500 + | Kr. 21,736 | Kr. 108,68 |
*price indicative
- RS Stock No.:
- 281-6028
- Distrelec Article No.:
- 304-42-105
- Mfr. Part No.:
- IRF840PBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | IRF840 | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 850mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series IRF840 | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 850mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay IRF840 Series Power MOSFET, 500V Drain Source Voltage, 8A Continuous Drain Current - IRF840PBF
This power MOSFET is a high-voltage N-channel transistor designed for switching and power-handling roles in industrial and electronic systems. It operates over a wide ambient range and is supplied in a through-hole TO-220 package for straightforward mounting and heatsinking in control assemblies.
Features and Benefits:
• 500V drain voltage supports high-voltage switching applications
• 8 A continuous drain current enables substantial load drive
• 125W power dissipation allows sustained thermal loading
• 850 mΩ RDS(on) reduces conduction losses under load
• 63 nC typical gate charge offers predictable switching behaviour
• 20V maximum gate-source rating protects the gate from overdrive
• 8 A continuous drain current enables substantial load drive
• 125W power dissipation allows sustained thermal loading
• 850 mΩ RDS(on) reduces conduction losses under load
• 63 nC typical gate charge offers predictable switching behaviour
• 20V maximum gate-source rating protects the gate from overdrive
Applications
• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor control stages
• Used for load switching in power distribution modules
• Can be used for laboratory high-voltage test rigs
• Suitable for discrete amplifier and converter circuits
• Ideal for industrial motor control stages
• Used for load switching in power distribution modules
• Can be used for laboratory high-voltage test rigs
• Suitable for discrete amplifier and converter circuits
What ambient temperature range can it tolerate in operation?
It operates between -55 °C and 150 °C, allowing use in harsh thermal environments and elevated junction scenarios.
How is it mounted and cooled in a system?
It is supplied in a TO-220AB through-hole package enabling bolted heatsink attachment for efficient thermal management.
What gate drive constraints should designers observe?
Gate drive must remain within ±20V to avoid exceeding the maximum gate-source rating and to preserve device integrity.
How does switching performance relate to gate charge?
The typical 63 nC gate charge gives designers a basis on which to calculate driver current and switching transition times for specified drive voltages.
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