Diodes Inc N-Channel MOSFET, 2 A, 30 V, 3-Pin SOT-23 ZXMN3A01FTA
- RS Stock No.:
- 669-7385
- Mfr. Part No.:
- ZXMN3A01FTA
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 25 units)*
Kr.76 55
(exc. VAT)
Kr.95 70
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 25 unit(s) ready to ship
- Plus 5 600 unit(s) shipping from 15. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 125 | Kr. 3,062 | Kr. 76,55 |
| 150 - 725 | Kr. 2,515 | Kr. 62,88 |
| 750 - 1475 | Kr. 2,127 | Kr. 53,18 |
| 1500 + | Kr. 1,732 | Kr. 43,30 |
*price indicative
- RS Stock No.:
- 669-7385
- Mfr. Part No.:
- ZXMN3A01FTA
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 120 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 806 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 3.9 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3.05mm | |
| Number of Elements per Chip | 1 | |
| Width | 1.4mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1mm | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 2 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 120 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 806 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 3.9 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 3.05mm | ||
Number of Elements per Chip 1 | ||
Width 1.4mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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